Türkçe

Uygar Avcı

(Part Time)

Degrees Received

BS: Electrical Engineering, Bogazici University
BS: Physics, Bogazici University
MS: Applied Physics, Cornell University
PhD: Applied Physics, Cornell University
Areas of Interest

  • Nanoscale semiconductor devices
  • Transistor and memory device scaling
  • Exploratory devices and circuits

Selected Publications

  • I. Ban, U. E. Avci, D. L. Kencke, P. Tolchinsky and P.L.D. Chang, VLSI Technology Symp., pp. 159-160, June 2010: Integration of Back-Gate doping for 15-nm node floating body cell (FBC) memory
  • U. E. Avci, I. Ban, D. L. Kencke and P.L.D. Chang, Int. SOI Conference, pp. 29-30, Oct 2008: Floating body cell (FBC) memory for 16-nm technology with low variation on thin-silicon and 10-nm BOX
  • I. Ban, U. E. Avci, D. L. Kencke and P.L.D. Chang, VLSI Technology Symp., pp. 92-93, June 2008: A scaled floating body cell (FBC) with high-k+metal gate on thin-silicon and thin-BOX for 16-nm technology node and beyond
  • H. Lin, H. Liu, A. Kumar, U. Avci, J. VanDelden and S. Tiwari, Electron Device Letters, vol: 28, issue: 6, pp.506-508, June 2007: Strained-Si channel super-self-aligned back-gate/double-gate planar transistors
  • I. Ban, U. E. Avci, U. Shah, C. E. Barns, D. L. Kencke and P. Chang, Int. Electron Devices Meeting, 2006: Floating body cell with independently-controlled double gates for high density memory
  • H. Lin, H. Liu, A. Kumar, U. E. Avci, J. S. Van Delden and S. Tiwari, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol: 24, no: 6, pp. 3230-3233, Nov. 2006: Super-self-aligned back-gate/double-gate planar transistors: Novel fabrication approach
  • H. Lin, H. Liu, A. Kumar, U. Avci, J. VanDelden and S. Tiwari, 2006 Device Research Conference, pp.37-38, 2006: Super-self-aligned back-gate/double-gate planar transistors with thick source/drain and thin silicon channel
  • U. Avci and S. Tiwari, Microelectronics Journal, vol: 36, no: 1, pp. 67-75, Jan. 2005: A novel compact circuit for 4-PAM energy-efficient high speed interconnect data transmission and reception
  • U. Avci, A. Kumar, and S. Tiwari, Int. SOI Conference, 2004: Back-floating gate non-volatile memory
  • U. Avci and S. Tiwari, Applied Physics Letters, vol: 84, no: 13, pp.2406-2408, 29 March 2004: Nano-scale thin single-crystal silicon and its application to electronics
  • U. Avci and S. Tiwari, Electronics Letters, vol: 40, issue: 1, pp.74-75, 8 Jan. 2004: Back-gated MOSFETs with controlled silicon thickness for adaptive threshold-voltage control
  • H. Silva, M.K. Kim, A. Kumar, U. Avci and S. Tiwari, Int. Electron Devices Meeting,, p. 271, 2003: Few electron memories: finding the compromise between performance, variability and manufacturability at the nano-scale
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