1. 13^th Joint MMM-Intermag Conference 2016, San Diego, California, USA:
Aisha Gokce, Ozhan Ozatay, Thomas Hauet, Givonni Finocchio, Anna Giordano, Jordan Katine
“Spin Torque Driven Bubble Motion in Magnetic Nanowires with Perpendicular Anisotropy”

2. American Physical Society March Meeting 2016, Baltimore, Maryland, USA:
İbrahim Cinar, Servet Özdemir, Egecan Cogulu, Aisha Gokce, Barry Stipe, Jordan Katine, Gülen Aktas, Ozhan Ozatay
“Towards a drift-free multi-level Phase Change Memory”

3. American Physical Society March Meeting 2016, Baltimore, Maryland, USA:
Kaan Ozbozduman, Vedat Karakas, Sevdenur Arpaci, Ali Taha Habibioglu, Aisha Gokce, Anna Giordano, Federica Celegato, Paula Tiberto, Giovanni Finocchio, Gulen Aktas, Ozhan Ozatay
“Spin Torque induced anti-vortex excitations”

1.Siracusano, Gulio; Tomasello, Ricardo; Giordano, Anna; Puliafito, Vito; Azzerboni, Bruno; Ozatay, Ozhan; Carpentieri, Mario; Finocchio, Giovanni “Magnetic Radial Vortex Stabilization and Efficient Manipulation Driven by the Dzyaloshinskii-Moriya Interaction and Spin-Transfer Torque”
PHYSICAL REVIEW LETTERS, 117, 087204 (2016)

2.Gokce, Aisha; Cinar, Ibrahim; Ozdemir, Servet C; Cogulu, Egecan; Stipe, Barry; Katine, Jordan A; Ozatay, Ozhan “Toward Multiple-Bit-Per-Cell Memory Operation With Stable Resistance Levels in Phase Change Nanodevices”
IEEE TRANSACTIONS ON ELECTRON DEVICES, (2016)

3.Liu, Tao; Puliafito, Vito; Montaigne, François; Petit, Sebastien; Deranlot, Cyrile; Andrieu, Stephane; Ozatay, Ozhan; Finocchio, Giovanni; Hauet, Thomas “Reproducible formation of single magnetic bubbles in an array of patterned dots”
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 49, 245002 (2016)

4.Gokce,Aisha; Coskuner,Ahmet; Kosoglu,Gulsen; Altunay,Omer; Yumak,Mehmet;  Ozatay, Ozhan; Skarlatos, Yani “A Porous Silicon Recipe for Si Solar Cell Applications”
BAOJ Physics, 1, 1 (2016)

1. Cinar, Ibrahim; Aslan, Ozgur Burak; Gökçe Aisha et al. “Three dimensional finite element modeling and characterization of intermediate states in single active layer phase change memory devices”
JOURNAL OF APPLIED PHYSICS, 117, 214302 (2015)